DatasheetsPDF.com

AO7407

Alpha Industries
Part Number AO7407
Manufacturer Alpha Industries
Description P-Channel MOSFET
Published Mar 26, 2005
Detailed Description May 2003 AO7407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7407 uses advanced trench ...
Datasheet PDF File AO7407 PDF File

AO7407
AO7407

Overview
May 2003 AO7407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
Features VDS (V) = -20V ID = -1.
2 A RDS(ON) < 135mΩ (VGS = -4.
5V) RDS(ON) < 170mΩ (VGS = -2.
5V) RDS(ON) < 220mΩ (VGS = -1.
8V) SC-70 SOT 323 Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -1.
2 -1.
0 -10 0.
35 0.
22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO7407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-1.
2A TJ=125°C VGS=-2.
5V, ID=-1A VGS=-1.
8V, ID=-1A VDS=-5V, ID=-3A -0.
3 -10 -0.
55 111 141 137 4 169 7 -0.
78 Min -20 -1 -5 ±100 -1 135 175 170 220 -1 -0.
6 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)