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AO7404

Alpha & Omega Semiconductors
Part Number AO7404
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7404 uses advanced trench technology...
Datasheet PDF File AO7404 PDF File

AO7404
AO7404

Overview
AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V, in the small SOT323 footprint.
It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected to 1KV HBM.
Standard Product AO7404 is Pb-free (meets ROHS & Sony 259 specifications).
AO7404L is a Green Product ordering option.
AO7404 and AO7404L are electrically identical.
Features VDS (V) = 20V ID = 1 A (VGS = 4.
5V) RDS(ON) < 225mΩ (VGS = 4.
5V) RDS(ON) < 290mΩ (VGS = 2.
5V) RDS(ON) < 425mΩ (VGS = 1.
8V) SC-70 (SOT-323) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 1 0.
75 5 0.
35 0.
22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 340 280 Max 360 425 320 Units °C/W °C/W °C/W Alpha Omega Semiconductor, Ltd.
Free Datasheet http://www.
datasheet4u.
com/ AO7404 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=4.
5V, ID=1A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=2.
5V, ID=0.
85A VGS=1.
8V, ID=0.
7A gFS VSD IS Forward Transconductance VDS=5V, ID=1A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.
4 5 186 262 241 326 2.
6 0.
69 1 0.
4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.
57 VGS=4.
5V, VDS=10V, ID=1A 0.
13 0.
36 3.
2 VGS=5V, VDS=10V, RL=10Ω, RGEN=6Ω IF=1A,...


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