DatasheetsPDF.com

AO7403

Alpha & Omega Semiconductors
Part Number AO7403
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Dec 2, 2013
Detailed Description AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology...
Datasheet PDF File AO7403 PDF File

AO7403
AO7403

Overview
AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.
8V, in the small SOT323 footprint.
It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM.
Standard Product AO7403 is Pb-free (meets ROHS & Sony 259 specifications).
AO7403L is a Green Product ordering option.
AO7403 and AO7403L are electrically identical.
SC-70 (SOT-323) Top View G D S G S Features VDS (V) = -20V ID = -0.
7A (VGS = -4.
5V) RDS(ON) < 470mΩ (VGS = -4.
5V) RDS(ON) < 625mΩ (VGS = -2.
5V) RDS(ON) < 900mΩ (VGS = -1.
8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -20 ±8 -0.
7 -0.
5 -3 0.
35 0.
22 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.
datasheet4u.
com/ AO7403 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-0.
7A Static Drain-Source On-Resistance TJ=125°C VGS=-2.
5V, ID=-0.
6A -0.
5 -3 388 542 519 666 1.
7 -0.
86 470 660 625 900 -1 -0.
4 114 17 14 12 1.
44 0.
14 0.
35 6.
5 6.
5 18.
2 5.
5 10 3 -0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)