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2SD638

Panasonic Semiconductor
Part Number 2SD638
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB...
Datasheet PDF File 2SD638 PDF File

2SD638
2SD638

Overview
Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.
9±0.
1 2.
5±0.
1 1.
0 Unit: mm 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 q q Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(Ta=25˚C) Ratings 30 60 25 50 7 1 0.
5 600 150 –55 ~ +150 Unit V 1.
0 0.
45±0.
05 1 s Features 1.
5 1.
5 R0.
9 R0.
9 0.
4 1.
0±0.
1 R 0.
7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.
85 0.
55±0.
1 3 2 emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 2.
5 2.
5 V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD638 2SD639 2SD638 2SD639 (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 1.
25±0.
05 max 0.
1 1 4.
1±0.
2 4.
5±0.
1 Unit µA µA V 30 60 25 50 7 85 40 160 90 0.
35 200 6 *2 V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 0.
6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 800 800 700 2SD638, 2SD639 IC — VCE Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 0 3mA 2mA 1mA 800 VCE=10V Ta=25˚C 700 IC — I B Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 ...


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