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2SD662

Panasonic Semiconductor
Part Number 2SD662
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm ...
Datasheet PDF File 2SD662 PDF File

2SD662
2SD662

Overview
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.
9±0.
1 1.
5 2.
5±0.
1 1.
0 1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 s Features q q q 1.
5 R0.
9 R0.
9 0.
85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit 3 0.
55±0.
1 1.
25±0.
05 0.
45±0.
05 2 1 V 2.
5 2.
5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold ...


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