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2SJ148

Toshiba Semiconductor
Part Number 2SJ148
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applic...
Datasheet PDF File 2SJ148 PDF File

2SJ148
2SJ148

Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications 2SJ148 Unit: mm • Excellent switching time: ton = 14 ns (typ.
) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.
3 Ω (typ.
) • Enhancement-mode • Complementary to 2SK982 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse ID −200 mA IDP −800 JEDEC TO-92 Drain power dissipation (Ta = 25°C) PD 400 mW JEITA SC-43 Channel temperature Tch 150 °C TOSHIBA 2-5F1H Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.
g.
the application of Weight: 0.
21 g (typ.
) high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol Test Condition IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss VGS = ±10 V, VDS = 0 VDS = −60 V, VGS = 0 ID = −1 mA, VGS = 0 VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −50 mA ID = −50 mA, VGS = −10 V ID = −50 mA, VGS = −10 V VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDS ...


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