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2SJ518

Hitachi Semiconductor
Part Number 2SJ518
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ518 Silicon P Channel MOS FET High Speed Power Switching ADE-208-580B (Z) 3rd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ518 PDF File

2SJ518
2SJ518


Overview
2SJ518 Silicon P Channel MOS FET High Speed Power Switching ADE-208-580B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
35 Ω typ.
at (V GS = –10V, ID = –1A) • Low drive current • 4 V gete drive devices • High speed switching Outline UPAK 3 D 2 1 4 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note2 Note1 Ratings –60 ±20 –2 –4 –2 –2 0.
34 Unit V V A A A A mJ W °C ...



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