DatasheetsPDF.com

2SJ530

Hitachi Semiconductor
Part Number 2SJ530
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Feature...
Datasheet PDF File 2SJ530 PDF File

2SJ530
2SJ530

Overview
2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
08 Ω typ.
• 4V gate drive devices.
• High speed switching.
Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min –60 ±20 — — –1.
0 — — 6.
5 — — — — — — — — — Typ — — — — — 0.
08 0.
11 11 850 420 110 12 75 125 75 –1.
1 70 Max — — –10 ±10 –2.
0 0.
10 0.
16 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –15A, VGS = 0 I F = –15A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –8A, VGS = –10V Note4 I D = –8A, VGS = –4V Note4 I D = –8A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –8A RL = 3.
75 Ω 2 2SJ530(L),2SJ530(S) M...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)