DatasheetsPDF.com

2SJ532

Hitachi Semiconductor
Part Number 2SJ532
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B (Z) 3rd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ532 PDF File

2SJ532
2SJ532

Overview
2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
042 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220CFM D G 1 2 S 3 1.
Gate 2.
Drain 3.
Source 2SJ532 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –20 –80 –20 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –20 34 30 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.
0 — — 10 — — — — — — — — — Typ — — — — — 0.
042 0.
065 16 1750 800 180 16 100 230 140 –1.
0 100 Max — — –10 ±10 –2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)