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2SJ534

Hitachi Semiconductor
Part Number 2SJ534
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C (Z) 4th. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ534 PDF File

2SJ534
2SJ534

Overview
2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
050 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SJ534 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –18 –72 –18 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –18 27 30 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.
0 — — 10 — — — — — — — — — Typ — — — — — 0.
050 0.
070 16 1300 650 180 14 95 190 135 –1.
0 70 Max — — –10 ±10 –2.
0 0.
...


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