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2SJ535

Hitachi Semiconductor
Part Number 2SJ535
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B (Z) 3rd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ535 PDF File

2SJ535
2SJ535

Overview
2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
028 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220FM D G S 1 2 1.
Gate 2.
Drain 3.
Source 3 2SJ535 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 35 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.
0 — — 15 — — — — — — — — — Typ — — — — — 0.
028 0.
038 25 2500 1300 300 25 150 350 220 –0.
95 100 Max — — –10 ±10 –...


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