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2SJ537

Toshiba Semiconductor
Part Number 2SJ537
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ537 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI) 2SJ537 Chopper Regulator, DC−DC Converte...
Datasheet PDF File 2SJ537 PDF File

2SJ537
2SJ537

Overview
2SJ537 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI) 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
16 Ω (typ.
) z High forward transfer admittance : |Yfs| = 3.
5 S (typ.
) z Low leakage current : IDSS = −100 μA (VDS = −50 V) z Enhancement mode : Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg −50 −50 ±20 −5 −15 0.
9 150 −55~150 V V V A A W °C °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1C Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 138 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 http://store.
iiic.
cc/ 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transf...


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