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2SJ539

Hitachi Semiconductor
Part Number 2SJ539
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ539 PDF File

2SJ539
2SJ539

Overview
2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
16 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.
5 40 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.
0 — — 3.
5 — — — — — — — — — Typ — — — — — 0.
16 0.
23 5.
5 400 220 75 10 45 65 50 –1.
2 70 Max — — –10 ±10 –2.
0 0.
21 0.
36 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –10A, VGS = 0 I F = –10A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –5A, VGS = –10V I D = –5A, VGS = –4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf I D = –5A, VDS = –10V VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –5A RL = 6Ω Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4.
Pulse test t rr 2 2SJ539 Main Characteristics Power vs...


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