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2SJ546

Hitachi Semiconductor
Part Number 2SJ546
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ546 Silicon P Channel MOS FET High Speed Power Switching ADE-208-638A (Z) 2nd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ546 PDF File

2SJ546
2SJ546

Overview
2SJ546 Silicon P Channel MOS FET High Speed Power Switching ADE-208-638A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
075 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SJ546 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 ...


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