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2SK2118

Part Number	2SK2118
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe...
Datasheet	2SK2118 PDF File

Overview

2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline TO-220CFM D G 12 3 1.
Gate 2.
Drain 3.
Source S 2SK2118 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 5 20 5 35 150 –55 to +150 Unit V ...

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