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2SK2129

Panasonic Semiconductor
Part Number 2SK2129
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS FET
Published Mar 30, 2005
Detailed Description Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20m...
Datasheet PDF File 2SK2129 PDF File

2SK2129
2SK2129

Overview
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 s Applications 4.
1±0.
2 8.
0±0.
2 Solder Dip 13.
7–0.
2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.
0±0.
3 3.
0±0.
2 +0.
5 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 2.
6±0.
1 0.
7±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800...


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