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2SK2131


Part Number 2SK2131
Manufacturer NEC
Title SWITCHING N-CHANNEL POWER MOSFET
Description ...
Features ...

File Size 379.08KB
Datasheet 2SK2131 PDF File








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2SK213 : 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25°C .

2SK213 : 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 www.DataSheet4U.com Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 5 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage.

2SK2130 : Power F-MOS FETs 2SK2130 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 45ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900.

2SK2132 : .

2SK2133 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SK2133-Z : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SK2134 : .

2SK2134-Z : .

2SK2135 : .

2SK2136 : .

2SK2136-Z : .

2SK2137 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SK2138 : The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Channel Temperature Tch 150 ˚C Single Avalanche Current** IAS 14 A Single Avalanche Energy** .

2SK2138-Z : The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Channel Temperature Tch 150 ˚C Single Avalanche Current** IAS 14 A Single Avalanche Energy** .

2SK2139 : The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 (MP-45F) Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS.




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