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2SK2614

Toshiba Semiconductor
Part Number 2SK2614
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2614 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2614 Chopper Regulator, DC/DC Convert...
Datasheet PDF File 2SK2614 PDF File

2SK2614
2SK2614

Overview
2SK2614 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2614 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.
032 Ω (typ.
) z High forward transfer admittance : |Yfs| = 13S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 50 50 ±20 20 50 40 150 −55~150 V V V A A W °C °C Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperatu...


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