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2SK2615

Toshiba Semiconductor
Part Number 2SK2615
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2615 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2615 DC−DC Converter, Relay Drive and...
Datasheet PDF File 2SK2615 PDF File

2SK2615
2SK2615


Overview
2SK2615 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2615 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.
23 Ω (typ.
) z High forward transfer admittance : |Yfs| = 2.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD Tch Tstg 60 60 ±20 2 6 0.
5 1.
5 150 −55 to 150 V V V A W W °C °C Note 1: Ensure that the channel temperature does not exceed 150°C.
JEDEC ― JEITA ― TOSHIBA 2-5K1B Weight: 0.
05 g (typ.
) Note 2: Mounted on a ceramic substrate (25.
4 mm × 25.
4 mm × 0.
8 mm) Note 3: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W This transistor is an electrostatic-sensitive device.
Please handle with caution.
Marking Part No.
(or abbreviation code) Note 4: A line to the right of a Lot No.
identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE...


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