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2SK3380

Hitachi Semiconductor
Part Number 2SK3380
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.Edition. June 1999 Features • Low on-resista...
Datasheet PDF File 2SK3380 PDF File

2SK3380
2SK3380

Overview
2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.
Edition.
June 1999 Features • Low on-resistance R DS =1.
26 Ω typ.
(V GS = 10 V , ID = 150 mA) R DS = 2.
8 Ω typ.
(VGS = 4 V , ID = 50 mA) • 4 V gate drive device.
Outline SPAK D 12 3 G 1.
Source 2.
Drain 3.
Gate S 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings 30 ±20 300 1.
2 300 300 150 –55 to +150 Unit V V mA A mA mW °C °C Electric...


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