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2SK3417

Toshiba Semiconductor
Part Number 2SK3417
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications · ...
Datasheet PDF File 2SK3417 PDF File

2SK3417
2SK3417

Overview
2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications · · · · · · Reverse-recovery time: trr = 60 ns (typ.
) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.
6 Ω (typ.
) High forward transfer admittance: ïYfsï = 4.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 -55~150 Unit V V V A W...


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