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2SK3439

Toshiba Semiconductor
Part Number 2SK3439
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Relay Drive and Mo...
Datasheet PDF File 2SK3439 PDF File

2SK3439
2SK3439


Overview
2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.
8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 70 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage te...



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