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2SK3462

Toshiba Semiconductor
Part Number 2SK3462
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switc...
Datasheet PDF File 2SK3462 PDF File

2SK3462
2SK3462


Overview
2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.
DataSheet4U.
com 2SK3462 Unit: mm Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.
2 Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 3 6 20 36.
2 3 2 150 −55~150 A Unit V V V Pulse (t ...



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