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2SK3466

Toshiba Semiconductor
Part Number 2SK3466
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drai...
Datasheet PDF File 2SK3466 PDF File

2SK3466
2SK3466

Overview
2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (ON) = 1.
35 Ω (typ.
) High forward transfer admittance: ïYfsï = 4.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) · · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 -55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanch...


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