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FDB6676S

Fairchild Semiconductor
Part Number FDB6676S
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET™ General Description This MOSFET...
Datasheet PDF File FDB6676S PDF File

FDB6676S
FDB6676S

Overview
FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDP/B6676S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode.
Features • 38 A, 30 V.
RDS(ON) = 6.
5 mΩ @ VGS = 10 V RDS(ON) = 8.
0 mΩ @ VGS = 4.
5 V • Includes SyncFET Schottky body diode • Low gate charge (40nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1) (Note 1) Units V V A W W/°C °C °C 76 150 70 0.
56 –55 to +150 275 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.
8 55 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6676S FDP6676S Device FDB6676S FDP6676S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 45 2001 Fairchild Semiconductor Corporation FDP6676S/FDB6676S Rev.
C (W) FDP6676S/FDB6676S Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 25 V, ID=12A...


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