Part Number FDB6676S
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to...
• 38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
• D D G G D S TO-220 FD...

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FDB6676 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) . Features • 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Synchronous rectifier • DC/DC converter . D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol V.

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