DatasheetsPDF.com

FDD5614P

Fairchild Semiconductor
Part Number FDD5614P
Manufacturer Fairchild Semiconductor
Description 60V P-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD5614P February 2001 FDD5614P 60V P-Channel PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses F...
Datasheet PDF File FDD5614P PDF File

FDD5614P
FDD5614P

Overview
FDD5614P February 2001 FDD5614P 60V P-Channel PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.
It has been optimized for power management applications.
Features • –15 A, –60 V.
RDS(ON) = 100 mΩ @ VGS = –10 V RDS(ON) = 130 mΩ @ VGS = –4.
5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Power management • Load switch S D G S TO-252 D G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W –15 –45 42 3.
8 1.
6 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 3.
5 40 96 °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD5614P Device FDD5614P Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD5614P Rev C(W) FDD5614P Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VDD = –30 V, ID = –4.
5 A Min Typ Max Units 90 –4.
5 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –48 V, VGS = 20V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V –60 –49 –1 100 –100 V mV/°C µA nA ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)