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FDD5612

ON Semiconductor
Part Number FDD5612
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 22, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 60 V FDD5612 General Description This N−Channel MOSFET has been designed specifically t...
Datasheet PDF File FDD5612 PDF File

FDD5612
FDD5612

Overview
MOSFET – N-Channel, POWERTRENCH) 60 V FDD5612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 18 A, 60 V ♦ RDS(ON) = 55 mW @ VGS = 10 V ♦ RDS(ON) = 64 mW @ VGS = 6 V • Optimized for Use in High Frequency DC/DC Converters • Low Gade Charge • Very Fast Switching • This Device is Pb−Free and are RoHS Compliant www.
onsemi.
com D G S G D S DPAK3 (TO−252 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FDD 5612 $Y &Z &3 &K FDD5612 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2001 1 January, 2021 − Rev.
4 Publication Order Number: FDD5612/D FDD5612 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted) Symbol Parameter Ratings Units VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current − Continuous Drain Current − Pulsed TC = 25°C TC = 100°C TA = 25°C (Note 1a) TA = 25°C (Note 1b) 60 V ±20 V 18 A 13 5.
4 3.
5 100 PD Maximum Power Dissipation TC = 25°C 42 W TC = 100°C 21 TA = 25°C (Note 1a) 3.
8 TA = 25°C (Note 1b) 1.
6 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter RqJC RqJA RqJA Thermal Resistance, Junction−to−Case Therm...


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