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FDD5612

Fairchild Semiconductor
Part Number FDD5612
Manufacturer Fairchild Semiconductor
Description 60V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD5612 July 1999 ADVANCE INFORMATION FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MO...
Datasheet PDF File FDD5612 PDF File

FDD5612
FDD5612

Overview
FDD5612 July 1999 ADVANCE INFORMATION FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.
Features • 19 A, 60 V.
RDS(ON) = 0.
055 Ω @ VGS = 10 V RDS(ON) = 0.
064 Ω @ VGS = 6 V.
• Optimized for use in • • Low gate charge.
Very fast switching.
high frequency DC/DC converters.
Applications • • DC/DC converter Motor drives D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed o G S T C =25 C unless otherwise noted o Parameter Ratings 60 ± 20 (Note 1) (Note 1a) Units V V A 19 6 100 36 3.
2 1.
3 -55 to +150 Maximum Power Dissipation @ T C = 25 C T A = 25 C T A = 25 C o o (Note 1) (Note 1a) (Note 1b) W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics R θJA R θJC Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.
5 40 96 ° C/W ° C/W Package Marking and Ordering Information Device Marking FDD5612 1999 Fairchild Semiconductor Corporation Device FDD5612 Reel Size 13” Tape Width 16mm Quantity 2500 FDD5612 Rev.
A FDD5612 Electrical Characteristics Symbol Parameter TC=25oC unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 60 1 100 -100 ...


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