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FDS7064A

Fairchild Semiconductor
Part Number FDS7064A
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDS7064A May 2000 ADVANCE INFORMATION FDS7064A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MO...
Datasheet PDF File FDS7064A PDF File

FDS7064A
FDS7064A


Overview
FDS7064A May 2000 ADVANCE INFORMATION FDS7064A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS( ON) in a small package.
Features • 19 A, 30 V RDS(ON) = 6.
5 mΩ @ VGS = 4.
5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • Bottomless™ SO-8 package: Enhanced thermal performance in industry-standard package size Applications • Synchronous rectifier • DC/DC converter S D Bottomless SO-8 S D S D DS D 5 6 7 Bottom -sid e Drain Con tact 4 3 2 1 Pin 1 SO-8 G S S S S S S TA =25 oC unless otherwise noted G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±12 (Note 1a) Units V V A W °C 19 60 3.
9 –55 to +175 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ A RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 38 1 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7064A Device FDS7064A Reel Size 13’’ Tape width 12mm Quantity 2500 units © 2000 Fairchild Semiconductor Corporation FDS7064A Rev A1(W) FDS7064A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR T A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25° C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V , VDS = 0 V Min 30 Typ Max Units V Off C...


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