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FDS7064N

Fairchild Semiconductor
Part Number FDS7064N
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDS7064N January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been de...
Datasheet PDF File FDS7064N PDF File

FDS7064N
FDS7064N


Overview
FDS7064N January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features • 16 A, 30 V RDS(ON) = 7.
5 mΩ @ VGS = 4.
5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • Synchronous rectifier • DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 12 (Note 1a) Units V V A W °C 16 60 3.
0 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 40 0.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7064N Device FDS7064N Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS7064N Rev C2 (W) FDS7064N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V , VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, R...


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