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FQPF8N60C

Fairchild Semiconductor
Part Number FQPF8N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description The...
Datasheet PDF File FQPF8N60C PDF File

FQPF8N60C
FQPF8N60C

Overview
FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.
5 A, 1.
2 Ω November 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features • 7.
5 A, 600 V, RDS(on) = 1.
2 Ω (Max.
) @ VGS = 10 V, ID = 3.
75 A • Low Gate Charge (Typ.
28 nC) • Low Crss (Typ.
12 pF) • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Puls...


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