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FQPF8N60

Part Number	FQPF8N60
Manufacturer	AOKE
Description	600V N-Channel MOSFET
Published	Aug 26, 2014
Detailed Description	FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 2...
Datasheet	FQPF8N60 PDF File

Overview

FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.
5A,600V,RDS(on)=1.
0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings Symbol VDSS ID Drain to Source Voltage Continuous Drain Current(...

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