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FQPF8N60CF

Fairchild Semiconductor
Part Number FQPF8N60CF
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Dec 4, 2011
Detailed Description FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 ...
Datasheet PDF File FQPF8N60CF PDF File

FQPF8N60CF
FQPF8N60CF


Overview
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.
26 A, 1.
5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 6.
26 A, 600 V, RDS(on) = 1.
5 Ω (Max.
) @ VGS = 10 V, ID = 3.
13 A • Low Gate Charge (Typ.
28 nC) • Low Crss (Typ.
12 pF) • 100% Avalanche Tested D GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Singl...



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