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2SC5013

NEC
Part Number 2SC5013
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER...
Datasheet PDF File 2SC5013 PDF File

2SC5013
2SC5013

Overview
DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 10 GHz TYP.
) • Low Noise, High Gain • Low Voltage Operation 0.
3 +0.
1 –0.
05 PACKAGE DIMENSIONS in millimeters 2.
1 ± 0.
2 1.
25 ± 0.
1 0.
3 +0.
1 –0.
05 (LEADS 2, 3, 4) (1.
3) 2.
0 ± 0.
2 0.
60 0.
65 ORDERING INFORMATION PART NUMBER 2SC5013-T1 XYZ QUANTITY 3 Kpcs/Reel.
PACKING STYLE Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.
(1.
25) 2 3 1 4 0.
4 +0.
1 –0.
05 0.
9 ± 0.
1 0.
3 2SC5013-T2 3 Kpcs/Reel.
0 to 0.
1 * Please contact with responsible NEC person, If you require evaluation sample.
Unit sample quantity shall be 50 pcs.
(Part No.
: 2SC5013) PIN CONNECTIONS 1.
Collector 2.
Emitter 3.
Base 4.
Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.
5 35 150 150 –65 to +150 V V V mA mW ˚C ˚C Caution; Electrostatic Sensitive Device.
Document No.
P10401EJ2V0DS00 (2nd edition) (Previous No.
TD-2413) Date Published July 1995 P Printed in Japan © 0.
3 +0.
1 –0.
05 0.
15 +0.
1 –0.
05 1993 2SC5013 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF 7.
5 50 100 10 0.
25 9.
5 1.
8 3.
0 0.
8 MIN.
TYP.
MAX.
1.
0 1.
0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA*1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 6 V, IC = 10 mA,f = 2.
0 GHz VCE = 6 V, IC = 5 mA,f = 2.
0 GHz µA µA *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 ...


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