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2SC5029

Toshiba Semiconductor
Part Number 2SC5029
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switchin...
Datasheet PDF File 2SC5029 PDF File

2SC5029
2SC5029

Overview
2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • • • • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A, IB = 0.
05 A) High collector power dissipation: PC = 1.
3 W High-speed switching: tstg = 1.
0 μs (typ.
) Complementary to 2SA1892 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 3 0.
2 1.
3 150 −55 to 150 Unit V V V A A W °C °C JEDE...


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