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2SC5030

Toshiba Semiconductor
Part Number 2SC5030
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applicat...
Datasheet PDF File 2SC5030 PDF File

2SC5030
2SC5030

Overview
2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.
5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.
3 W Maximum Ratings (Ta = 25°C) Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range mbol VCBO VCES VCEO 20 VEBO C Rating 50 40 Unit V V V 8 5 8 0.
5 3 150 −55 to 150 JE...


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