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2SC5095

Toshiba Semiconductor
Part Number 2SC5095
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • L...
Datasheet PDF File 2SC5095 PDF File

2SC5095
2SC5095

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain.
• NF = 1.
8dB, |S21e|2 = 7.
5dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 1.
5 V 7 mA 15 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.
006 g (typ.
) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz Min Typ.
Max Unit 7 10 ⎯ GHz ⎯ 13 ⎯ dB 4.
5 7.
5 ⎯ ⎯ 1.
4 ⎯ dB ⎯ 1.
8 3.
0 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 6 V, IC = 7 mA ⎯ ⎯ 1 μA ⎯ ⎯ 1 μA 50 ⎯ 160 Output capacitance Reverse transfer capacitance Cob ⎯ 0.
5 ⎯ pF VCB = 10...


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