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2SC5233

Toshiba Semiconductor
Part Number 2SC5233
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and...
Datasheet PDF File 2SC5233 PDF File

2SC5233
2SC5233

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5233 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.
) @IC = 10 mA/IB = 0.
5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
006 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on resistance Symbol Test Condition ICBO VCB = 15 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 2 V, IC = 10 mA VCE (sat) (1) VCE (sat) (2) VBE (sat) IC = 10 mA, IB = 0.
5 mA IC = 200 mA, IB = 10 mA IC = 200 mA, IB = 10 mA fT VCE = 2 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Ron IB = 1 mA, Vin = 1 Vrms, f = 1 kHz Turn-on time ton 2SC5233 Min Typ.
Max Unit ⎯ ⎯ 0.
1 μA ⎯ ⎯ 0.
1 μA...


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