DatasheetsPDF.com

2SD1220

Toshiba Semiconductor
Part Number 2SD1220
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • ...
Datasheet PDF File 2SD1220 PDF File

2SD1220
2SD1220

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 150 V 150 V 6V 1.
5 A 1.
0 A 1.
0 W 10 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-02-05 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 150 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (Note) VCE = 5 V, IC = 200 mA VCE (sat) VBE fT Cob IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 200 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking 2SD1220 Min Typ.
Max Unit ― ― 1.
0 μA ― ― 1.
0 μA 150 ― ― V 60 ― 320 ― ― 1.
5 V 0.
5 ― 0.
8 V 20 100 ― MHz ― 13 20 pF D1220 Characteristics indicator Part No.
(or abbreviation code) ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)