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2SD1223

Toshiba Semiconductor
Part Number 2SD1223
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer ...
Datasheet PDF File 2SD1223 PDF File

2SD1223
2SD1223

Overview
2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Complementary to 2SB908.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 4 0.
4 1.
0 15 150 −55 to 150 Unit V V V A A JEDEC W °C °C ― ― 2-7J1A JEITA TOSHIBA Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit COLLECTOR BASE ≈ 4.
5 kΩ ≈ 300 Ω EMITTER 1 2010-02-05 Free Datasheet http://www.
Datasheet4U.
com 2SD1223 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) ton IB1 Test Condition VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 6 mA IC = 3 A, IB = 6 mA OUTPUT 10 Ω Min ― ― 80 2000 1000 ― ― ― Typ.
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