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2SD1224

Toshiba Semiconductor
Part Number 2SD1224
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Driv...
Datasheet PDF File 2SD1224 PDF File

2SD1224
2SD1224

Overview
2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.
5 0.
15 1.
0 10 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit BASE COLLECTOR EMITTER JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.
36 g (typ.
) 1 2002-07-23 2SD1224 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ.
Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― ― 1.
5 V ― ― 2.
2 V Turn-on time Switching time Storage time Fall time ton OUTPUT ― 0.
18 ― 20 µs IB1 INPUT IB1 15 Ω tstg IB2 IB2 ― 0.
6 ― µs VCC ≈ 15 V tf IB1 = −IB2 = 1 mA, DUTY CYCLE ≤ 1% ― 0.
3 ― Marking D1224 Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 Collector current IC (mA) 500 Common emitter Tc = 25°C IC – VCE 400 60 50 300 200 100 0 0 40 30 20 IB = 10 µA 0 12345 Collector-emitter voltage VCE (V) 6 IC – VCE 500 Common emitter Tc = −50°C 400 300 200 160 140 120 100 80 60 100 0 0 ...


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