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2SD1249

Panasonic Semiconductor
Part Number 2SD1249
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification 10.0...
Datasheet PDF File 2SD1249 PDF File

2SD1249
2SD1249

Overview
Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification 10.
0±0.
3 1.
5±0.
1 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 s Features q q 10.
5min.
High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 350 400 250 300 5 1.
5 0.
75 35 1.
3 150 –55 to +150 Unit V 1.
5max.
2.
0 1.
1max.
0.
8±0.
1 0.
5max.
s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1249 2SD1249A 2SD1249 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.
54±0.
3 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 emitter voltage 2SD1249A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.
0±0.
3 6.
0±0.
3 V A A W 1.
5–0.
4 2.
0 3.
0–0.
2 4.
4±0.
5 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
0 to 0.
4 5.
08±0.
5 ˚C ˚C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.
3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.
2A VCE = 10V, IC = 0.
2A, f = 10MHz IC = 1A, IB1 = 0.
1A, IB2 = – 0.
1A, VCC = 50V 30 0.
5 2 0.
5 250 300 40 10 1.
5 1 V V MHz µs µs µs 250 min typ max 1 1 1 1 1 Unit mA 4.
4±0.
5 14.
7±0.
5 +0.
4 +0 mA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification R 40 to 90 Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Tra...


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