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2SD1250

Panasonic Semiconductor
Part Number 2SD1250
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Power Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical de...
Datasheet PDF File 2SD1250 PDF File

2SD1250
2SD1250

Overview
Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 10.
0±0.
3 s Features q q q 1.
5±0.
1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 200 200 150 180 6 3 2 30 1.
3 150 –55 to +150 Unit V 1.
5max.
1.
1max.
10.
5min.
2.
0 0.
8±0.
1 0.
5max.
2.
54±0.
3 5.
08±0.
5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1250 2SD1250A 2SD1250 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 1.
5–0.
4 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 2.
0 3.
0–0.
2 A A W ˚C ˚C 4.
4±0.
5 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
0 to 0.
4 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1250 2SD1250A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 10V, IC = 0.
5A, f = 1MHz min typ max 50 50 4.
4±0.
5 Unit µA µA V V V 200 150 180 6 60 50 1 1 20 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h V V MHz FE1 Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 14.
7±0.
5 emitter voltage 2SD1250A 10.
0±0.
3 V +0.
...


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