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2SD1252

Panasonic Semiconductor
Part Number 2SD1252
Manufacturer Panasonic Semiconductor
Description Silicon NPN triple diffusion Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2...
Datasheet PDF File 2SD1252 PDF File

2SD1252
2SD1252

Overview
Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 60 80 60 80 6 5 3 35 1.
3 150 –55 to +150 Unit V 1.
5±0.
1 1.
5max.
10.
5min.
2.
0 1.
1max.
0.
8±0.
1 0.
5max.
s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1252 2SD1252A 2SD1252 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.
54±0.
3 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 emitter voltage 2SD1252A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.
7±0.
5 4.
4±0.
5 0 to 0.
4 1.
5–0.
4 V A A W ˚C ˚C 10.
0±0.
3 4.
4±0.
5 2.
0 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1252 2SD1252A 2SD1252 2SD1252A 2SD1252 2SD1252A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.
375A VCE = 5V, IC = 0.
5A, f = 10MHz IC = 1A, IB1 = 0.
1A, IB2 = – 0.
1A, VCC = 50V 30 0.
5 2.
5 0.
4 60 80 40 10 1.
8 1.
2 V V MHz µs µs µs 250 min typ max 200 200 300 300 1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h...


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