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2SD1260

Panasonic Semiconductor
Part Number 2SD1260
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complem...
Datasheet PDF File 2SD1260 PDF File

2SD1260
2SD1260


Overview
Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 60 80 60 80 5 4 2 35 1.
3 150 –55 to +150 Unit V 1.
5±0.
1 s Features 1.
5max.
10.
5min.
2.
0 1.
1max.
0.
8±0.
1 0.
5max.
s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1260 2SD1260A 2SD1260 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.
54±0.
3 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 emitter voltage 2SD1260A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C 1 10.
0±0.
3 6.
0±0.
3 1.
5–0.
4 ...



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