DatasheetsPDF.com

2SD1867

Rohm
Part Number 2SD1867
Manufacturer Rohm
Description Power Transistor
Published Apr 3, 2005
Detailed Description Power Transistor (100V, 2A) 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in ...
Datasheet PDF File 2SD1867 PDF File

2SD1867
2SD1867

Overview
Power Transistor (100V, 2A) 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
zinner circuit C B R1 R2 E R1 3.
5kΩ R2 300Ω B : Base C : Collector E : Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage Emitter-base voltage VCEO VEBO 100 6 V V Collector current IC 2 3 ∗1 Collector power dissipation 2SD1980 2SD1867 PC 1 10 1 ∗2 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=100ms ∗2 Printed circuit board, 1.
7mm thick, collector plating 100mm2 or larger.
A(DC) A(Pulse) W W(Tc=25°C) W °C °C zPackaging specifications and hFE Type 2SD1980 2SD1867 Package hFE Marking CPT3 1k to 10k − ATV 1k to 10k − Code TL TV2 Basic ordering unit (pieces) ∗ Denotes hFE 2500 2500 zDimensions (Unit : mm) 2SD1980 6.
5 5.
1 2.
3 0.
5 0.
9 5.
5 1.
5 1.
5 9.
5 0.
8Min.
2.
5 0.
75 0.
9 2.
3 (1) (2) 0.
65 (3) 2.
3 ROHM : CPT3 EIAJ : SC-63 2SD1867 6.
8 0.
5 1.
0 (1) Base (2) Collector (3) Emitter 2.
5 0.
9 4.
4 1.
0 14.
5 0.
65Max.
(1) (2) (3) 2.
54 2.
54 0.
5 ROHM : ATV 1.
05 0.
45 Taping specifications (1) Emitter (2) Collector (3) Base zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag Base-Emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current.
Symbol BVCBO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min.
100 100 6 − − − − 1000 − − Typ.
− − − − − − − − 80 25 Max.
− − − 10 3 1.
5 2.
0 10000 − − Unit V V V µA mA V V − MHz pF Conditions IC = 50µA IC = 5mA IE = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA ∗ IC/IB = 1A/1mA VCE = 2V , IC = 1A ∗ VCE = 5V ,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)