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2SD1892

Part Number	2SD1892
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP Transistor
Published	Apr 3, 2005
Detailed Description	Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to ...
Datasheet	2SD1892 PDF File

Overview

Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 7.
5±0.
2 s Features q q q q 0.
7±0.
1 4.
2±0.
2 Unit: mm 14.
0±0.
5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W 16.
7±0.
3 φ3.
1±0.
1 4.
0 1.
4±0.
1 1.
3±0.
2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.
8±0.
1 0.
5 –0.
1 +0.
2 2.
54±0.
25 5.
08±0.
5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 4mA IC = 4A, IB = 4mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 4A, IB1 = 4mA, IB2 = –4mA, VCC = 50V 20 2.
5 3.
5 1.
0 100 2000 5000 30000 2.
5 3.
0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 1 Power Transistors PC — Ta 60 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 5 IB=0.
8mA 0.
7mA 4 0.
6mA 0.
5mA 3 0.
4mA 0.
3mA 2 0.
2mA 2SD1892 IC — VCE 100 VBE(...

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