DatasheetsPDF.com

2SD1893

Panasonic Semiconductor
Part Number 2SD1893
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to ...
Datasheet PDF File 2SD1893 PDF File

2SD1893
2SD1893

Overview
Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 3.
2 s Features q q q q 16.
2±0.
5 12.
5 3.
5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 110 5 10 6 50 3 150 –55 to +150 Unit V V V A A W 0.
7 21.
0±0.
5 15.
0±0.
2 φ3.
2±0.
1 2.
0±0.
2 2.
0±0.
1 0.
6±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.
1±0.
1 5.
45±0.
3 10.
9±0.
5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) Internal Connection C B ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 130V, IE = 0 VCE = 110V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC = 5A, IB = 5mA IC = 5A, IB = 5mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 5A, IB1 = 5mA, IB2 = –5mA, VCC = 50V 20 1.
4 4.
5 0.
8 110 2000 5000 30000 2.
5 3.
0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 1 Power Transistors PC — Ta 80 12 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) IB=5mA 2SD1893 IC — VCE 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W)...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)