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IMT2A

Rohm
Part Number IMT2A
Manufacturer Rohm
Description Dual Transistor
Published Apr 5, 2005
Detailed Description EMT2 / UMT2N / IMT2A General purpose transistor (dual transistors) Datasheet Parameter VCEO IC   Tr1 and Tr2 -50V -15...
Datasheet PDF File IMT2A PDF File

IMT2A
IMT2A


Overview
EMT2 / UMT2N / IMT2A General purpose transistor (dual transistors) Datasheet Parameter VCEO IC   Tr1 and Tr2 -50V -150mA   lFeatures 1) Two 2SA1037AK chips in a EMT, UMT or    SMT package.
2) Mounting possible with EMT3, UMT3 or SMT3   automatic mounting machines.
3) Transistor elements are independent,   eliminating interference.
4) Mounting cost and area can be cut in half.
lOutline EMT6 UMT6   SMT6 EMT2 SOT-563        IMT2A SOT-457                lInner circuit EMT2 / UMT2N UMT2N SOT-363       IMT2A lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications Part No.
Package EMT2 UMT2N IMT2A EMT6 UMT6 SMT6 Package size 1616 2021 2928       Taping Reel size Tape width code (mm) (mm) T2R TR T108   180 180 180   8 8 8   Basic ordering unit.
(pcs) 8000 3000 3000       Marking T2 T2 T2                                                                                            www.
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, Ltd.
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1/8 20150527 - Rev.
004 EMT2 / UMT2N / IMT2A lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation EMT2/ UMT2N IMT2A Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC PD*1 *2 PD*1 *3 Tj Tstg Values -60 -50 -6 -150 150 300 150 -55 to +150 Unit V V V mA mW/Total mW/Total ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = -50μA Collector-emitter breakdown voltage BVCEO IC = -1mA Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain BVEBO ICBO IEBO VCE(sat) hFE IE = -50μA VCB = -60V VEB = -6V IC = -50mA, IB = -5mA VCE = -6V, IC = -1mA Transition frequency fT VCE = -12V, IE = 2mA, f = 100MHz Output capacitance Cob VCB = -12V, IE = 0A, f = 1MH...



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