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IMT2A

UTC
Part Number IMT2A
Manufacturer UTC
Description GENERAL PURPOSE DUAL TRANSISTOR
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR  DESCRIPTION ...
Datasheet PDF File IMT2A PDF File

IMT2A
IMT2A

Overview
UNISONIC TECHNOLOGIES CO.
, LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR  DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package.
 FEATURES * Two MMBT9015 chips in an SMT package.
 EQUIVALENT CIRCUITS  ORDERING INFORMATION Order Number IMT2AG-AG6-R IMT2AG-AG6-R (1)Packing Type (2)Package Type (3)Green Package  MARKING Package SOT-26 Pin Description 123456 C1 B2 C2 E2 E1 B1 Packing Tape Reel (1) R: Tape Reel (2) AG6: SOT-26 (3) G: Halogen Free and Lead Freee www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R215-003.
E IMT2A PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage Collector to Emitter voltage VCBO -60 V VCEO -50 V Emitter to Base Voltage Collector Current VEBO IC -6 -150 V mA Collector Power Dissipation (total) Junction Temperature PC TJ 300(Note) 150 mW °C Storage Temperature TSTG -55~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
200mW per element must not be exceeded.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC =-50 μA Collector to Emitter Breakdown Voltage BVCEO IC =-1mA Emitter to Base Breakdown Voltage BVEBO IE =-50 μA Collector Cut Off Current ICBO VCB =-60 V Emitter Cut Off Current IEBO VEB =-6 V Collector to Emitter Saturation Voltage VCE(SAT) IC=-50 mA, IB=-5 mA DC Forward Current Gain hFE VCE =-6 V, IC=-1mA Transition Frequency fT VCE =-12V,IE =2mA, f=100MHz (Note) Output Capacitance COB VCB = -12V,IE =0mA,f=1MHz Note: Transition frequency of the device.
MIN TYP MAX UNIT -60 V -50 V -6 V -0.
1 μA -0.
1 μA -0.
5 V 120 560 14...


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